Research Article
Year 2024,
Volume: 11 Issue: 1, 137 - 146, 28.03.2024
Abstract
In our study, the effects of the metal oxide (aluminum oxide, Al2O3) thin film placed between the metal and the semiconductor on the diode's characteristics were investigated. The Al2O3 thin film was suitable for its growth on a p-type silicon substrate by the atomic layer deposition (ALD) technique. In this study, a diode structure with an oxide interlayer was fabricated. To investigate the electrical parameters of the fabricated Schottky diode, measurements of current-voltage (I-V) were carried out at room temperature and in the 5 V voltage range. Using the I-V measurements, diode parameters such as the barrier height (Φb), the ideality factor (n), and the current density (I0) were evaluated using the theory of thermionic emission (TE) and Cheung's method. Using the TE method and Cheung’s method, the approximate values of Φb, n parameters were calculated as 0.77 eV, 5.43, and 0.77 Ev, 5.97, respectively. According to calculations, the developed Schottky diode is a rectifier diode and has been determined to have photodiode properties. This research offers an understanding of the production and electrical characteristics of Schottky devices based on Al2O3.
References
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- Troncy, R. (2021). Synthesis and high-temperature behavior of self-restoring coatings. Doctoral dissertation, Université de La Rochelle.
- Wang, Z. L. (2004). Zinc oxide nanostructures: growth, properties and applications. Journal of physics: condensed matter, 16(25), R829, https://doi.org/10.1088/0953-8984/16/25/R01
- Yi̇ldi̇z, D. E., & Cavuş, H. K., (2017). Electrical properties of Al/p-Si structure with Al2O3 thin film fabricated by atomic layer deposition system. Surface Review and Letters, 24(06), 1750077, http://dio.org/ 10.1142/S0218625X17500779
Year 2024,
Volume: 11 Issue: 1, 137 - 146, 28.03.2024
Abstract
References
- Buyukbas-Ulusan, A., Tataroglu, A., & Altındal-Yerişkin, Seçkin (2023). Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al2O3 Interfacial Layer over Wide Temperature Range. ECS Journal of Solid State Science and Technology, 12(8), 083010, http://doi.org/10.1149/2162-8777/acf06e
- Cheung, S. K., & Cheung, N. W. (1986). Extraction of Schottky diode parameters from forward current‐voltage characteristics. Applied physics letters, 49(2), 85-87, http://doi.org/10.1063/1.97359
- Choi, H. Y., Jeon, J. D., Kim, S. E., Jang, S. Y., Sung, J. Y., & Lee, S. W. (2023). Strained BaTiO3 thin films via in-situ crystallization using atomic layer deposition on SrTiO3 substrate. Materials Science in Semiconductor Processing, 160, 107442, https://doi.org/10.1016/j.mssp.2023.107442
- Deniz, A. R., Caldıran, Z., & Taşyürek, L. B., (2022). Electrical characteristics of Al2O3/p-Si heterojunction diode and effects of radiation on the electrical properties of this diode. Journal of Materials Science: Materials in Electronics, 33(36), 26954-26965, https://doi.org/10.2139/ssrn.4136068
- Efil, E., Kaymak, N., Seven, E., Orhan, E. O., Bayram, O., Ocak, S. B., & Tataroglu, A. (2020). Current–voltage analyses of Graphene-based structure onto Al2O3/p-Si using various methods. Vacuum, 181, 109654, https://doi.org/10.1016/j.vacuum.2020.109654
- Eymur, S., & Tuğluoğlu, N. (2021). Fabrication and characterization of Au/MO/n-Si (Mo: ZnO, In2O3, Al2O3) Schottky diodes grown by RF magnetron sputtering. New Materials, Compounds and Applications, 5(2), 122-131.
- Ji, C., Solomon, M. T., Grant, G. D., Tanaka, K., Hua, M., Wen, J., & Dibos, A. M. (2023). Nanocavity-mediated Purcell enhancement of Er in TiO thin films grown via atomic layer deposition. arXiv preprint arXiv:2309.13490, https://doi.org/10.48550/arXiv.2309.13490
- Kong, M., Li, B., Guo, C., Zeng, P., Wei, M., & He, W. (2019). The optical absorption and photoluminescence characteristics of evaporated and IAD HfO2 thin films. Coatings, 9(5), 307, https://doi.org/10.3390/coatings9050307
- Kosal, M., Marıl, E., & Altındal, Ş. (17 - 19 August 2019). Temperature Dependent Current-Transport Mechanisms (CTMs) in the Al/Al2O3/p-Si (MIS) Diodes (SDs) Using Current-Voltage-Temperature (IVT) Characteristics in the Temperature Range of 200-320 K. 1st International Conference on Optoelectronics, Applied Optics and Microelectronics, Erdebil, Iran.
- Nicollian, E. H., & Brews, J. R. (1982). Experimental evidence for interface trap properties. MOS (Metal Oxide Semiconductor) Physics and Technology, John Wiley and Sons, New York, 291-314.
- Rhoderick, E. H., & Williams, R. H. (1988). Metal-semiconductor contacts (Vol.129). Oxford: Clarendon Press.
- Schilirò, E., Fiorenza, P., Lo Nigro, R., Galizia, B., Greco, G., Di Franco, S., Bongiorno, C., La Via, F., Giannazzo, F., & Roccaforte, F. (2023). Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices. Materials, 16(16), 5638, https://doi.org/10.3390/ma16165638
- Seven, E., Orhan, E. Ö., Di Bartolomeo, A., Ertuğrul, M., & Taştekin, N. A. (2024). Graphene/Al2O3/Si Schottky diode with integrated waveguide on a silicon-on-insulator wafer. Indian Journal of Physics, 1-9, https://doi.org/10.1007/s12648-023-03062-7
- Singh, A. (1985). Characterization of interface states at Ni/n CdF2 Schottky barrier type diodes and the effect of CdF2 surface preparation. Solid-State Electronics, 28(3), 223-232, https://doi.org/10.1016/0038-1101(85)90002-4
- Suntola, T. (1992). Atomic layer epitaxy. Materials Science Reports, 4(5), 261-312, https://doi.org/10.1016/0040-6090(92)90874-B
- Szatkowski, J., & Sierański, K. (1988). Interface effects on Mg Zn3P2 Schottky diodes. Solid-state electronics, 31(2), 257-260, https://doi.org/10.1016/0038-1101(88)90138-4
- Sze, S. M. (1981). (Second edition) Physics of Semiconductor Devices. New York: John Wiley & Sons, 362-390.
- Tongpeng, S., Wannapaiboon, S., Amonpattaratkit, P., Silawong, P., Janphuang, P., Pattanakul, R., & Jiansirisomboon, S. (2023). Effects of La-Doped HfO2 Films on Dielectric Properties by Sol-Gel Method. Integrated Ferroelectrics, 239(1), 30-42, https://doi.org/10.1080/10584587.2023.2234607
- Troncy, R. (2021). Synthesis and high-temperature behavior of self-restoring coatings. Doctoral dissertation, Université de La Rochelle.
- Wang, Z. L. (2004). Zinc oxide nanostructures: growth, properties and applications. Journal of physics: condensed matter, 16(25), R829, https://doi.org/10.1088/0953-8984/16/25/R01
- Yi̇ldi̇z, D. E., & Cavuş, H. K., (2017). Electrical properties of Al/p-Si structure with Al2O3 thin film fabricated by atomic layer deposition system. Surface Review and Letters, 24(06), 1750077, http://dio.org/ 10.1142/S0218625X17500779
There are 21 citations in total.
Details
| Primary Language | English |
|---|---|
| Subjects | Nanomaterials |
| Journal Section | Metallurgical and Materials Engineering |
| Authors | |
| Early Pub Date | February 19, 2024 |
| Publication Date | March 28, 2024 |
| Submission Date | January 3, 2024 |
| Acceptance Date | February 9, 2024 |
| Published in Issue | Year 2024 Volume: 11 Issue: 1 |
