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Self-Consistent Calculation of the Potential at AlGaAs/GaAs Heterostructures

Year 2014, Volume: 3 Issue: 2, 15 - 24, 03.02.2015
https://doi.org/10.17100/nevbiltek.210936

Abstract

In this work, energy bant dispersion of AlGaAs/GaAs heterostructure, one of the III-V group elements of semiconductors is obtained by solving the Schrödinger and Poisson equations self-consistently for the modeling of double (bilayer) 2DEGs placed parallel. We investigate the electronic properties of AlGaAs/GaAs heterostructures as a function of the doping level in a condition where we obtain several different donor exist on one side and on both sides of the 2DEG. Besides, changes in the energy bant dispersion due to different Al concentrations are systematically investigated for these systems

References

  • Türkoğlu A., “GaAs-AlxGa1-xAs Heteroyapı ve Çoklu Kuantum Kuyu IR Fotodedektörün Elektro-optik Özelliklerinin İncelenmesi”, Cumhuriyet Üniversitesi, Fen Bilimleri Enstitüsü, Doktora tezi, 158, Sivas, 2007.
  • Stradling R.A., “The Electronic Properties and Applications of Quantum Wells and Superlattices of III-V Narrow Gap Semiconductors”, Brazilian J. Phys., 26, (1), 7-20, 1996
  • Chalker J.T., Gefen Y., Veillette M.Y., “Decoherence and Interactions in an Electronic March- Zehnder Interferometer”, Phys. Rev. B, 76, (8), 1-11, 2007
  • Mese A.I., Bilekkaya A., Arslan S., Aktas S., Siddiki A., “Investigation of The Coupling Asymmetries at Double-Slit Interference Experiment Samples” J. Phys. A : Math. Theor., 43, (35), 1-8, 2010
  • Ihnatsenka S., Zozoulenko I.V., “Interacting Electrons in The Aharonov-Bohm Interferometer”, Physical Review B, 77, (23), 1-9, 2008
  • Morgan C.G., Kratzer P., Scheffler M., “Arsenic Dimer Dynamics During MBE Growth: Theoretical Evidence for a Novel Chemisorption State of As2 Molecules on GaAs Surfaces” Phys. Rev. Lett., 82, (24), 4886-4889, 1999
  • Erol A., “Yüzey Işıması Yapan Düşük Boyutlu Yapılarda Bragg Yansıma Olaylarının İncelenmesi”, İstanbul Üniversitesi, Fen Bilimleri Enstitüsü, Doktora tezi, 138, İstanbul, 2002.
  • Picciotto R.de, Stormer H.L., Yacoby A., Pfeiffer L.N., Baldwin K.W., West K.W., “2D-1D Coupling in Cleaved Edge Overgrowth”, Phys. Rev. Lett,. 85, (8), 1730-1733, 2000
  • Picciotto R.de, Stormer H.L., Yacoby A., Pfeiffer L.N., Baldwin K.W., West K.W., “Transport in Cleaved-Edge Overgrowth Wires”, Physica E, 9, (1), 17-21, 2011
  • Grayson M., Roth S.F., Xiang Y., Fischer, F, Schuh D., Bichler M., “Four-Point Measurements of n- and p-type Two-Dimensional Systems Fabricated with Cleaved-Edge Overgrowth”, Appl. Phys. Lett., 87, (21), 1-2, 2005
  • Erkarslan U., Oylumluoglu G., Grayson M., Siddiki A., “The visibility of IQHE at sharp edges: experimental proposal based on interactions and edge electrostatics”, New Journal of Physics, 14, 023015-023020, 2012
  • Cicek E., Mese A.I, Ulas M., Siddiki A., “Spatial Distribution of the Incompressible Strips at AB Interferometer”, Physica E : Low-dimensional Systems and Nanostructures 42, (4), 1066-1068, 2010
  • Ando T., Fowler A., Stern F., “Electronic Properties of Two-Dimensional Systems”, Rev. Mod. Phys, 54, (2), 437-672, 1982
  • Tsui D. C., Störmer H.L., Gossard A.C., “Zero-Resistance State of Two-Dimensional Electrons in a Quantizing Magnetic Field”, Phys. Rev. B, 25, (2), 1405-1407, 1982
  • Matveev K.A., “Coulomb Blockade at Almost Perfect Transmission”, Phys. Rev. B, 51, (3), 1743-1751, 1995
  • Adachi S., “Properties of Aluminium Gallium Arsenide”, INSPEC, London, 341-362, 1993
  • Siddiki A., “Self-Consistent Coulomb Picture of an Electron-Electron Bilayer System”, Phys. Rev. B, 75, (15), 1-12, 2007

AlGaAs/GaAs Heteroyapılarda Öz Uyumlu Potansiyel Hesabı

Year 2014, Volume: 3 Issue: 2, 15 - 24, 03.02.2015
https://doi.org/10.17100/nevbiltek.210936

Abstract

Bu çalışmada, birbirine paralel ikili, iki boyutlu elektron gazını (2BEG) modellemek için III-V grubu yarı iletken elementlerinden AlGaAs/GaAs heteroyapısının enerji bant dağılımı Schrödinger ve Poissson denklemlerinin öz uyumlu çözümüyle elde edilmiştir. AlGaAs/GaAs heteroyapıların elektronik özellikleri katkılamanın 2BEG’in tek ve her iki tarafına yapılması durumunda katkılamanın bir fonksiyonu olarak incelenmiştir. Ayrıca; enerji bant dağılımının Al konsantrasyonuna bağlı değişimi sistematik olarak araştırılmıştır.

References

  • Türkoğlu A., “GaAs-AlxGa1-xAs Heteroyapı ve Çoklu Kuantum Kuyu IR Fotodedektörün Elektro-optik Özelliklerinin İncelenmesi”, Cumhuriyet Üniversitesi, Fen Bilimleri Enstitüsü, Doktora tezi, 158, Sivas, 2007.
  • Stradling R.A., “The Electronic Properties and Applications of Quantum Wells and Superlattices of III-V Narrow Gap Semiconductors”, Brazilian J. Phys., 26, (1), 7-20, 1996
  • Chalker J.T., Gefen Y., Veillette M.Y., “Decoherence and Interactions in an Electronic March- Zehnder Interferometer”, Phys. Rev. B, 76, (8), 1-11, 2007
  • Mese A.I., Bilekkaya A., Arslan S., Aktas S., Siddiki A., “Investigation of The Coupling Asymmetries at Double-Slit Interference Experiment Samples” J. Phys. A : Math. Theor., 43, (35), 1-8, 2010
  • Ihnatsenka S., Zozoulenko I.V., “Interacting Electrons in The Aharonov-Bohm Interferometer”, Physical Review B, 77, (23), 1-9, 2008
  • Morgan C.G., Kratzer P., Scheffler M., “Arsenic Dimer Dynamics During MBE Growth: Theoretical Evidence for a Novel Chemisorption State of As2 Molecules on GaAs Surfaces” Phys. Rev. Lett., 82, (24), 4886-4889, 1999
  • Erol A., “Yüzey Işıması Yapan Düşük Boyutlu Yapılarda Bragg Yansıma Olaylarının İncelenmesi”, İstanbul Üniversitesi, Fen Bilimleri Enstitüsü, Doktora tezi, 138, İstanbul, 2002.
  • Picciotto R.de, Stormer H.L., Yacoby A., Pfeiffer L.N., Baldwin K.W., West K.W., “2D-1D Coupling in Cleaved Edge Overgrowth”, Phys. Rev. Lett,. 85, (8), 1730-1733, 2000
  • Picciotto R.de, Stormer H.L., Yacoby A., Pfeiffer L.N., Baldwin K.W., West K.W., “Transport in Cleaved-Edge Overgrowth Wires”, Physica E, 9, (1), 17-21, 2011
  • Grayson M., Roth S.F., Xiang Y., Fischer, F, Schuh D., Bichler M., “Four-Point Measurements of n- and p-type Two-Dimensional Systems Fabricated with Cleaved-Edge Overgrowth”, Appl. Phys. Lett., 87, (21), 1-2, 2005
  • Erkarslan U., Oylumluoglu G., Grayson M., Siddiki A., “The visibility of IQHE at sharp edges: experimental proposal based on interactions and edge electrostatics”, New Journal of Physics, 14, 023015-023020, 2012
  • Cicek E., Mese A.I, Ulas M., Siddiki A., “Spatial Distribution of the Incompressible Strips at AB Interferometer”, Physica E : Low-dimensional Systems and Nanostructures 42, (4), 1066-1068, 2010
  • Ando T., Fowler A., Stern F., “Electronic Properties of Two-Dimensional Systems”, Rev. Mod. Phys, 54, (2), 437-672, 1982
  • Tsui D. C., Störmer H.L., Gossard A.C., “Zero-Resistance State of Two-Dimensional Electrons in a Quantizing Magnetic Field”, Phys. Rev. B, 25, (2), 1405-1407, 1982
  • Matveev K.A., “Coulomb Blockade at Almost Perfect Transmission”, Phys. Rev. B, 51, (3), 1743-1751, 1995
  • Adachi S., “Properties of Aluminium Gallium Arsenide”, INSPEC, London, 341-362, 1993
  • Siddiki A., “Self-Consistent Coulomb Picture of an Electron-Electron Bilayer System”, Phys. Rev. B, 75, (15), 1-12, 2007
There are 17 citations in total.

Details

Primary Language Turkish
Subjects Engineering
Journal Section Fizik
Authors

Selman Mirioğlu This is me

Uğur Erkarslan

Görkem Oylumluoğlu

Publication Date February 3, 2015
Published in Issue Year 2014 Volume: 3 Issue: 2

Cite

APA Mirioğlu, S., Erkarslan, U., & Oylumluoğlu, G. (2015). AlGaAs/GaAs Heteroyapılarda Öz Uyumlu Potansiyel Hesabı. Nevşehir Bilim Ve Teknoloji Dergisi, 3(2), 15-24. https://doi.org/10.17100/nevbiltek.210936
AMA Mirioğlu S, Erkarslan U, Oylumluoğlu G. AlGaAs/GaAs Heteroyapılarda Öz Uyumlu Potansiyel Hesabı. Nevşehir Bilim ve Teknoloji Dergisi. February 2015;3(2):15-24. doi:10.17100/nevbiltek.210936
Chicago Mirioğlu, Selman, Uğur Erkarslan, and Görkem Oylumluoğlu. “AlGaAs/GaAs Heteroyapılarda Öz Uyumlu Potansiyel Hesabı”. Nevşehir Bilim Ve Teknoloji Dergisi 3, no. 2 (February 2015): 15-24. https://doi.org/10.17100/nevbiltek.210936.
EndNote Mirioğlu S, Erkarslan U, Oylumluoğlu G (February 1, 2015) AlGaAs/GaAs Heteroyapılarda Öz Uyumlu Potansiyel Hesabı. Nevşehir Bilim ve Teknoloji Dergisi 3 2 15–24.
IEEE S. Mirioğlu, U. Erkarslan, and G. Oylumluoğlu, “AlGaAs/GaAs Heteroyapılarda Öz Uyumlu Potansiyel Hesabı”, Nevşehir Bilim ve Teknoloji Dergisi, vol. 3, no. 2, pp. 15–24, 2015, doi: 10.17100/nevbiltek.210936.
ISNAD Mirioğlu, Selman et al. “AlGaAs/GaAs Heteroyapılarda Öz Uyumlu Potansiyel Hesabı”. Nevşehir Bilim ve Teknoloji Dergisi 3/2 (February 2015), 15-24. https://doi.org/10.17100/nevbiltek.210936.
JAMA Mirioğlu S, Erkarslan U, Oylumluoğlu G. AlGaAs/GaAs Heteroyapılarda Öz Uyumlu Potansiyel Hesabı. Nevşehir Bilim ve Teknoloji Dergisi. 2015;3:15–24.
MLA Mirioğlu, Selman et al. “AlGaAs/GaAs Heteroyapılarda Öz Uyumlu Potansiyel Hesabı”. Nevşehir Bilim Ve Teknoloji Dergisi, vol. 3, no. 2, 2015, pp. 15-24, doi:10.17100/nevbiltek.210936.
Vancouver Mirioğlu S, Erkarslan U, Oylumluoğlu G. AlGaAs/GaAs Heteroyapılarda Öz Uyumlu Potansiyel Hesabı. Nevşehir Bilim ve Teknoloji Dergisi. 2015;3(2):15-24.

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