Araştırma Makalesi
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Bor ve Flor Katkılanmış ZnO İnce Filmlerinde K tabakası Flüoresans Verimlerinin XRF Tekniği ile Ölçülmesi

Yıl 2018, , 209 - 216, 23.10.2018

Ömer Söğüt , Gökhan Apaydın Erhan Cengiz , Süleyman Kerli

https://doi.org/10.17780/ksujes.430381

Öz

Bu çalışmada, kimyasal
püskürtme yöntemi ile %1-5 oranında flor katkılanılarak ve %2-5 oranında bor
katkılanılarak üretilen, ZnO (çinko oksit) ince filmlerde çinkonun K tabakası
flüoresans verimlerinin (wK)
bor ve flor katkı miktarlarına göre değişimi, X-ışını Flüoresans (XRF) tekniği ile
incelendi. Numuneleri
uyarmak için 50 mCi şiddetinde ve 59.543 keV enerjili fotonlar yayınlayan bir 241Am
radyoizotop kaynağı kullanıldı. Numunelerden yayınlanan karakteristik K
X-ışınlarını saymak için 5.96 keV’de yarı maksimumdaki tam genişliği (FWHM) 150
eV, aktif alanı 30 mm2 ve kalınlığı 5mm, polimer pencere kalınlığı
0.4μm olan Ultra-LEGe dedektörü kullanıldı. Flor
katkılanarak üretilen ZnO ince filmlerinde florun katkı miktarı artarken K
kabuğu flüoresans verim değerleri azalmıştır. Ancak, bor ekleyerek üretilen ZnO
ince filmlerde, bor katkısı artarken K kabuğu flüoresans verim değerleri de
artmıştır. Bunun nedeni ZnO ince filmine bor ve
flor ilavesinin ZnO yapısında perdeleme etkisi, bağ uzunluğu, kafes simetrisi
gibi bazı etkileşimleri değiştirmesi olabilir. Bu değişimde K X-ışını yayınlama
ihtimalini değiştirir. K
tabakası flüoresans verimlerinin flor ve bor katkı miktarlarına göre
değişimlerinin nedenlerinden biri de, katkılanan flor ve borun ZnO ince
filmindeki oksijen iyonları ile yer değiştirmesi olabilir.
Bunlara ek olarak, elementler kimyasal
bileşiklerde yer alırlarsa, yayınladıkları X-ışını çizgisinin dalga boyunda,
çizgi şiddetinde ve şeklinde değişimler görülür. 

Anahtar Kelimeler

ZnO Bor Flor İnce film kimyasal etki

Kaynakça

  • Baydaş E., Oz Orhan E., and Büyükyıldız M., 2009. Measurements of K-shell fluorescence yields for Ti, V, Cr, Fe, Co, Ni and Cu elements and their halogen compounds, Turk Journal of Phys 33, 311-316.
  • Bambynek W., Crasemann B., Fink R.W., Freund H.U., Mark H., Swift C.D., Price R.E., Rao P.V., 1972. X-Ray fluorescence Yield, Auger and Coster-Kronig Transition Probabilities, Rev. Mod. Phys. 44(4), 716-813.
  • Bakoglidis K.D., Schmidt S., Garbrecht, M. Ivanov I.G., Jensen J., Greczynski G., Hultman L., 2015. Low‐Temperature Growth of Low Friction Wear‐Resistant Amorphous Carbon Nitride Thin Films by Mid‐Frequency, High Power Impulse, and Direct Current Magnetron Sputering. J. Vac. Sci. Technol. A. 33(5): 05E112. DOI: 10.1116/1.4923275.
  • Broll N., 1986. Quantitative X-ray Fluorescence Analysis. Theory and Practice of Fundamental Coefficients Method, X-ray Spectrometry 15, 271-285.Cho S.H., Cho C. K., Hwang W.J., Eun K.T., Kim H K., 2011. Mechanical integrity of flexible InZnO/Ag/InZnO multilayer electrodes grown by continuous roll-to-roll sputtering, Solar Energy Materials and Solar Cells 95(12), 3442-3449.
  • Chen W., Zhu L., Li Y., Hu L., Guo Y., Xu H., Ye Z., 2013. Origin of highly stable conductivity of H plasma exposed ZnO films, Phys. Chem. Chem. Phys. 15 (41), 17763-17766.
  • Dhara S., Giri P.K., 2012. Stable p-type conductivity and enhanced photoconductivity from nitrogen-doped annealed ZnO thin film, Thin Solid Films 520 (15), 5000-5006.
  • Fahrenbruch, A.L., 1997, II-VI Compounds in solar energy conversion, Journal of Crystal Growth 39, p.73-91. Natsume Y., Sakata H., 2000. Zinc oxide films prepared by sol-gel spin coating, Thin Solid Films, 372, p.30-36.
  • Fink R.W., Jopson R.C., Mark H. and Swift D.C., 1966. Atomic Fluorescence Yields, Rev. Mod. Phys. 38, 513-540.Gallop J., Hao L., 2016. Nanoscale Superconducting Quantum Interference Devices Add Another Dimension. ACS Nano.10(9): 8128–8132. DOI: 10.1021/acsnano.6b04844.
  • Garg M.L., Mehta D., Kumar S., Mangal P.C. and Trehan P. N., 1985. Energy Dependence of Photon- Induced: Kα and K, X-Ray Fluorescence Cross Sections for some Elements with 20 <Z<56, X-Ray Spectrom.14, 165-169.Hubbell J.H., Seltzer S.M.,1995. Tables of X-Ray Mass Attenuation Coefficients and Mass Energy-Absorption Coefficients 1 keV to 20 MeVfor Elements Z = 1 to 92 and 48 Additional Substances of Dosimetric Interest, NISTIR 5632, U.S. Department of Commerce Technology Administration National Institute of Standards and Technology Physics Laboratory Ionizing Radiation Division Gaithersburg, MD 20899.
  • Hubbell J.H., Trehan, P.N., Singh N., Chand B., Mehta D., Garg M. L., Garg R.R., Singh S. and Puri S., 1994. A Review, Bibliography, and Tabulation of K, L, and Higher Atomic Shell X‐Ray Fluorescence Yields, J. Phys. Chem. Ref. Data 23, 339-364.
  • Ip K., Overberg M.E., Heo Y.W., Norton D.P., Pearton S.J., Stutz C.E., Luo B., Ren F., Look D.C., Zavada J.M., 2003. Hydrogen Incorporation and Diffusivity in Plasma Exposed Bulk ZnO, Appl. Phys. Lett. 82 (3), 385-387.
  • Kahoul A., Abassi A., Deghfel B., Nekka M., 2011. K-shell fluorescenceyieldsforelementswith6Z99, Radiation Physics and Chemistry 80, 369-377.
  • Krause M.0., 1979. Atornk Radiative and Radiationless Yields for K and L Sheils, J. Phys. and Chern. Ref. Data 8, 307-327.Kerli S., 2012. Bor-Flor Katkılı Zno İnce Film ve Parçacıkların Üretimi, Fiziksel Özelliklerinin İncelenmesi, Doktora Tezi, KSÜ Fen Bilimleri Enstitüsü, Fizik Anabilim Dalı, p.128.Kerli S., Alvera U., Yaykaslı H., Tekerek S., 2014. Flor Katkılı ZnO İnce Filmlerin Üretimi ve Fiziksel Özelliklerinin İncelenmesi, Düzce Üniversitesi Bilim ve Teknoloji Dergisi 2, 56–63.
  • Li Q., Zhu L., Li Y., Zhang X., Niu W., Guo Y., Ye Z., 2017. Highly conductive thin films of nonmetal F and B co-doped ZnO on flexible substrates: Experiment and first-principles calculations, Journal of Alloys and Compounds 697,156-160.
  • Nian Q., Zhang M.Y., Schwartz B.D., Cheng G.J., 2014. Ultraviolet laser crystallized ZnO:Al films on sapphire with high Hall mobility for simultaneous enhancement of conductivity and transparency, Appl. Phys. Lett. 104, 201907.
  • Naik G.V., Shalaev V.M., Boltasseva A., 2013. Alternative Plasmonic Materials: Beyond Gold and Silver, Adv. Mater. 25 (24), 3264-3294.
  • Nomura K., Ohta H., Ueda K., Kamiya T., Hirano M., Hosono H., 2003. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor, Secince 300 (5623), 1269-1272.Pious J.K., Balakrishna K. M., Lingappa N. and Siddappa K., 1992. Total K Fluorescence Yields for Fe, Cu, Zn, Ge and Mo, J. Phys. B 25, 1155-1160.Salam S., Islam M., Akram A., 2013. Sol–gel synthesis of intrinsic and aluminium-doped zinc oxide thin films as transparent conducting oxides for thin film solar cells, Thin Solid Films 529, 242-247.
  • Söğüt Ö., Dönük Ç., Apaydın G., Bakkaloğlu Ö.F., 2014. Examination of CoNiCu thin films by using XRF and XRD, Can. J. Phys. 92: 435–439. doi.org/10.113 /cjp-2012-0538.Şimşek Ö., Yılmaz S., Karagöz D., Ertuğrul M., 2002. Measurement of K shell fluorescence cross sections and K shell fluorescence yields for the atomic region 22Z64 by 59.5 keV photons, Journal of Radioanalytical and Nuclear Chemistry 253(1), 143-147.
  • Tıraşoğlu E., Söğüt Ö., 2008. Determination of experimental K-shell fluorescence yield for potassium and calcium compounds, Pramana Journal of Physics 70(3), 471-477.
  • Zou X., Liu X., Wang C., Jiang Y., Wang Y., Xiao X.H., 2012.Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement Mode Transistors, ACS Nano 7 (1), 804-810.
  • Tsay C., Fan K., Chen S., Tsai C., 2010. Preparation and characterization of ZnO transparent semiconductor thin films by sol–gel method, Journal of Alloys and Compounds, 495, 126-130.
  • Zhang S., 2010. Nanostructured Thin Films and Coatings: Mechanical Properties. Volume 1. Edition, CRC Press, Boca Raton, Florida, USA, 550, ISBN: 9781420094022.Wang T., Radovanovic P.V., 2010. Free Electron Concentration in Colloidal Indium Tin Oxide Nanocrystals Determined by Their Size and Structure, J. Phys. Chem. C 115 (2), 406-413.
  • Wong L.M., Chiam S.Y., Huang J.Q., Wang S.J., Pan J.S., Chim W.K., 2011. Role of oxygen for highly conducting and transparent gallium-doped zinc oxide electrode deposited at room temperature, Appl. Phys. Lett. 98 (2), 022106.

Yıl 2018, , 209 - 216, 23.10.2018

Ömer Söğüt , Gökhan Apaydın Erhan Cengiz , Süleyman Kerli

https://doi.org/10.17780/ksujes.430381

Öz

Kaynakça

  • Baydaş E., Oz Orhan E., and Büyükyıldız M., 2009. Measurements of K-shell fluorescence yields for Ti, V, Cr, Fe, Co, Ni and Cu elements and their halogen compounds, Turk Journal of Phys 33, 311-316.
  • Bambynek W., Crasemann B., Fink R.W., Freund H.U., Mark H., Swift C.D., Price R.E., Rao P.V., 1972. X-Ray fluorescence Yield, Auger and Coster-Kronig Transition Probabilities, Rev. Mod. Phys. 44(4), 716-813.
  • Bakoglidis K.D., Schmidt S., Garbrecht, M. Ivanov I.G., Jensen J., Greczynski G., Hultman L., 2015. Low‐Temperature Growth of Low Friction Wear‐Resistant Amorphous Carbon Nitride Thin Films by Mid‐Frequency, High Power Impulse, and Direct Current Magnetron Sputering. J. Vac. Sci. Technol. A. 33(5): 05E112. DOI: 10.1116/1.4923275.
  • Broll N., 1986. Quantitative X-ray Fluorescence Analysis. Theory and Practice of Fundamental Coefficients Method, X-ray Spectrometry 15, 271-285.Cho S.H., Cho C. K., Hwang W.J., Eun K.T., Kim H K., 2011. Mechanical integrity of flexible InZnO/Ag/InZnO multilayer electrodes grown by continuous roll-to-roll sputtering, Solar Energy Materials and Solar Cells 95(12), 3442-3449.
  • Chen W., Zhu L., Li Y., Hu L., Guo Y., Xu H., Ye Z., 2013. Origin of highly stable conductivity of H plasma exposed ZnO films, Phys. Chem. Chem. Phys. 15 (41), 17763-17766.
  • Dhara S., Giri P.K., 2012. Stable p-type conductivity and enhanced photoconductivity from nitrogen-doped annealed ZnO thin film, Thin Solid Films 520 (15), 5000-5006.
  • Fahrenbruch, A.L., 1997, II-VI Compounds in solar energy conversion, Journal of Crystal Growth 39, p.73-91. Natsume Y., Sakata H., 2000. Zinc oxide films prepared by sol-gel spin coating, Thin Solid Films, 372, p.30-36.
  • Fink R.W., Jopson R.C., Mark H. and Swift D.C., 1966. Atomic Fluorescence Yields, Rev. Mod. Phys. 38, 513-540.Gallop J., Hao L., 2016. Nanoscale Superconducting Quantum Interference Devices Add Another Dimension. ACS Nano.10(9): 8128–8132. DOI: 10.1021/acsnano.6b04844.
  • Garg M.L., Mehta D., Kumar S., Mangal P.C. and Trehan P. N., 1985. Energy Dependence of Photon- Induced: Kα and K, X-Ray Fluorescence Cross Sections for some Elements with 20 <Z<56, X-Ray Spectrom.14, 165-169.Hubbell J.H., Seltzer S.M.,1995. Tables of X-Ray Mass Attenuation Coefficients and Mass Energy-Absorption Coefficients 1 keV to 20 MeVfor Elements Z = 1 to 92 and 48 Additional Substances of Dosimetric Interest, NISTIR 5632, U.S. Department of Commerce Technology Administration National Institute of Standards and Technology Physics Laboratory Ionizing Radiation Division Gaithersburg, MD 20899.
  • Hubbell J.H., Trehan, P.N., Singh N., Chand B., Mehta D., Garg M. L., Garg R.R., Singh S. and Puri S., 1994. A Review, Bibliography, and Tabulation of K, L, and Higher Atomic Shell X‐Ray Fluorescence Yields, J. Phys. Chem. Ref. Data 23, 339-364.
  • Ip K., Overberg M.E., Heo Y.W., Norton D.P., Pearton S.J., Stutz C.E., Luo B., Ren F., Look D.C., Zavada J.M., 2003. Hydrogen Incorporation and Diffusivity in Plasma Exposed Bulk ZnO, Appl. Phys. Lett. 82 (3), 385-387.
  • Kahoul A., Abassi A., Deghfel B., Nekka M., 2011. K-shell fluorescenceyieldsforelementswith6Z99, Radiation Physics and Chemistry 80, 369-377.
  • Krause M.0., 1979. Atornk Radiative and Radiationless Yields for K and L Sheils, J. Phys. and Chern. Ref. Data 8, 307-327.Kerli S., 2012. Bor-Flor Katkılı Zno İnce Film ve Parçacıkların Üretimi, Fiziksel Özelliklerinin İncelenmesi, Doktora Tezi, KSÜ Fen Bilimleri Enstitüsü, Fizik Anabilim Dalı, p.128.Kerli S., Alvera U., Yaykaslı H., Tekerek S., 2014. Flor Katkılı ZnO İnce Filmlerin Üretimi ve Fiziksel Özelliklerinin İncelenmesi, Düzce Üniversitesi Bilim ve Teknoloji Dergisi 2, 56–63.
  • Li Q., Zhu L., Li Y., Zhang X., Niu W., Guo Y., Ye Z., 2017. Highly conductive thin films of nonmetal F and B co-doped ZnO on flexible substrates: Experiment and first-principles calculations, Journal of Alloys and Compounds 697,156-160.
  • Nian Q., Zhang M.Y., Schwartz B.D., Cheng G.J., 2014. Ultraviolet laser crystallized ZnO:Al films on sapphire with high Hall mobility for simultaneous enhancement of conductivity and transparency, Appl. Phys. Lett. 104, 201907.
  • Naik G.V., Shalaev V.M., Boltasseva A., 2013. Alternative Plasmonic Materials: Beyond Gold and Silver, Adv. Mater. 25 (24), 3264-3294.
  • Nomura K., Ohta H., Ueda K., Kamiya T., Hirano M., Hosono H., 2003. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor, Secince 300 (5623), 1269-1272.Pious J.K., Balakrishna K. M., Lingappa N. and Siddappa K., 1992. Total K Fluorescence Yields for Fe, Cu, Zn, Ge and Mo, J. Phys. B 25, 1155-1160.Salam S., Islam M., Akram A., 2013. Sol–gel synthesis of intrinsic and aluminium-doped zinc oxide thin films as transparent conducting oxides for thin film solar cells, Thin Solid Films 529, 242-247.
  • Söğüt Ö., Dönük Ç., Apaydın G., Bakkaloğlu Ö.F., 2014. Examination of CoNiCu thin films by using XRF and XRD, Can. J. Phys. 92: 435–439. doi.org/10.113 /cjp-2012-0538.Şimşek Ö., Yılmaz S., Karagöz D., Ertuğrul M., 2002. Measurement of K shell fluorescence cross sections and K shell fluorescence yields for the atomic region 22Z64 by 59.5 keV photons, Journal of Radioanalytical and Nuclear Chemistry 253(1), 143-147.
  • Tıraşoğlu E., Söğüt Ö., 2008. Determination of experimental K-shell fluorescence yield for potassium and calcium compounds, Pramana Journal of Physics 70(3), 471-477.
  • Zou X., Liu X., Wang C., Jiang Y., Wang Y., Xiao X.H., 2012.Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement Mode Transistors, ACS Nano 7 (1), 804-810.
  • Tsay C., Fan K., Chen S., Tsai C., 2010. Preparation and characterization of ZnO transparent semiconductor thin films by sol–gel method, Journal of Alloys and Compounds, 495, 126-130.
  • Zhang S., 2010. Nanostructured Thin Films and Coatings: Mechanical Properties. Volume 1. Edition, CRC Press, Boca Raton, Florida, USA, 550, ISBN: 9781420094022.Wang T., Radovanovic P.V., 2010. Free Electron Concentration in Colloidal Indium Tin Oxide Nanocrystals Determined by Their Size and Structure, J. Phys. Chem. C 115 (2), 406-413.
  • Wong L.M., Chiam S.Y., Huang J.Q., Wang S.J., Pan J.S., Chim W.K., 2011. Role of oxygen for highly conducting and transparent gallium-doped zinc oxide electrode deposited at room temperature, Appl. Phys. Lett. 98 (2), 022106.
Toplam 23 adet kaynakça vardır.

Ayrıntılar

Birincil Dil Türkçe
Konular Mühendislik
Bölüm Araştırma Makalesi
Yazarlar

Ömer Söğüt

Gökhan Apaydın

Erhan Cengiz

Süleyman Kerli

Yayımlanma Tarihi 23 Ekim 2018
Gönderilme Tarihi 4 Haziran 2018
Yayımlandığı Sayı Yıl 2018

Kaynak Göster

APA Söğüt, Ö., Apaydın, G., Cengiz, E., Kerli, S. (2018). Bor ve Flor Katkılanmış ZnO İnce Filmlerinde K tabakası Flüoresans Verimlerinin XRF Tekniği ile Ölçülmesi. Kahramanmaraş Sütçü İmam Üniversitesi Mühendislik Bilimleri Dergisi, 21(3), 209-216. https://doi.org/10.17780/ksujes.430381