ON-OFF VE DEĞİŞKEN ON KONTROLLÜ ZVS E-SINIFI REZONANS EVİRİCİ İÇİN Si-IGBT ve SiC-MOSFET’in KARŞILAŞTIRILMASI

Salih Nacar

doi:10.17780/ksujes.1524047

EN TR

COMPARISON OF Si-IGBT AND SiC-MOSFET FOR ON-OFF AND VARIABLE ON CONTROLLED ZVS CLASS-E RESONANT INVERTER

Abstract

The variation of switch stresses in ZVS class-E resonant inverters, depending on different control techniques, input voltage, and output power, limits the use of the Si MOSFET as a power switch due to its limited current-carrying capacity against breakdown voltage. Si IGBT and SiC MOSFET are used instead of Si MOSFET to counter this limitation. In this study, the operations of on-off and variable on-controlled ZVS class-E resonant inverters are examined. Si IGBT and SiC MOSFETs are used as power switches in the inverter controlled by two different control techniques. An experimental setup consisting of an input power of 372W inverter, and a control circuit is established to verify the theoretical studies. The on-off and variable on-controlled class-E resonant inverters, operating at a basic frequency of 24kHz, are tested separately using two different power switches. In the inverter where Si IGBT and SiC MOSFET are used separately, the maximum output power is 200.77W and 191.83W, respectively, while the efficiency is 53.93% and 54.57%, respectively. In the on-off controlled inverter, the efficiency is 22.15% for a minimum output power of 27.48W, whereas, in the variable on-time controlled inverter, the efficiency is 65.25% for a minimum output power of 11.69W. As a result, it is observed that the inverter efficiency decreases significantly with decreasing output power in the on-off controlled inverter, compared to the variable on-controlled inverter. Additionally, it is observed that the performance of the power switches, Si IGBT and SiC MOSFET, in terms of inverter efficiency is very close to each other in the inverter controlled separately by both control techniques.

Keywords

ON-OFF VE DEĞİŞKEN ON KONTROLLÜ ZVS E-SINIFI REZONANS EVİRİCİ İÇİN Si-IGBT ve SiC-MOSFET’in KARŞILAŞTIRILMASI

Öz

ZVS E-sınıfı rezonans eviricide anahtar streslerinin; farklı kontrol tekniklerine, giriş gerilimine ve çıkış gücüne bağlı olarak değişmesi dayanma gerilimine karşı taşıyabilecekleri akım değeri sınırlı olan Si MOSFET’in güç anahtarı olarak kullanımını sınırlandırmaktadır. Bu sınırlandırmaya karşı Si MOSFET yerine Si IGBT ve SiC MOSFET kullanılmaktadır. Bu çalışmada on-off ve değişken on kontrollü ZVS E-sınıfı rezonans eviricilerin çalışmaları incelenmiştir. İki farklı kontrol tekniği ile kontrol edilen eviricide güç anahtarı olarak Si IGBT ve SiC MOSFET kullanılmıştır. Teorik çalışmaları doğrulamak için giriş gücü 372W olan eviriciden ve kontrol devresinden oluşan deney düzeneği kurulmuştur. Temel çalışma frekansı 24kHz olan on-off ve değişken on kontrollü E-sınıfı rezonans evirici iki farklı güç anahtarı ile ayrı ayrı test edilmiştir. Si IGBT ve SiC MOSFET'in ayrı ayrı kullanıldığı eviricide maksimum çıkış gücü sıra ile 200,77W ve 191,83W iken verim değeri sıra ile %53,93 ve %54,57’dir. On-off kontrollü eviricide minimum çıkış güç değeri 27,48W için verim %22,15 iken değişken on kontrollü eviricide minimum güç değeri 11,69W için verim %65,25’tir. Sonuç olarak on-off kontrollü eviricide azalan çıkış gücü ile evirici veriminin değişken on kontrollü eviriciye göre oldukça fazla azaldığı görülmüştür. Ayrıca her iki kontrol tekniği ile ayrı ayrı kontrol edilen eviricide güç anahtarları Si IGBT ve SiC MOSFET’in evirici verimi yönünden performanslarının birbirine oldukça yakın olduğu gözlemlenmiştir.

Anahtar Kelimeler

Destekleyen Kurum

Bandırma Onyedi Eylül Üniversitesi

Proje Numarası

BAP-21-1003-011

Teşekkür

Bu çalışma Bandırma Onyedi Eylül Üniversitesi (BANÜ) Bilimsel Araştırma Projeleri Birimi tarafından desteklenmiştir (Proje Numarası: BAP-21-1003-011). Değerli destekleri için BANÜ’ye teşekkür ederim.

Kaynakça

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Ayrıntılar

Birincil Dil

Türkçe

Konular

Devreler ve Sistemler

Bölüm

Araştırma Makalesi

Yazarlar

Salih Nacar ^*
0000-0003-4843-9648
Türkiye

Yayımlanma Tarihi

3 Haziran 2025

Gönderilme Tarihi

29 Temmuz 2024

Kabul Tarihi

28 Mart 2025

Yayımlandığı Sayı

Yıl 2025 Cilt: 28 Sayı: 2

DOI

https://doi.org/10.17780/ksujes.1524047

IZ

https://izlik.org/JA76LE68UU

Kaynak Göster

RIS / Bibtex

APA

Nacar, S. (2025). ON-OFF VE DEĞİŞKEN ON KONTROLLÜ ZVS E-SINIFI REZONANS EVİRİCİ İÇİN Si-IGBT ve SiC-MOSFET’in KARŞILAŞTIRILMASI. Kahramanmaraş Sütçü İmam Üniversitesi Mühendislik Bilimleri Dergisi, 28(2), 601-612. https://doi.org/10.17780/ksujes.1524047